Optically pumped rolled-up InAs/InGaAsP quantum dash lasers at room temperature
Identifieur interne : 000782 ( Main/Repository ); précédent : 000781; suivant : 000783Optically pumped rolled-up InAs/InGaAsP quantum dash lasers at room temperature
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Abstract
We have investigated the fabrication and optical performance of free-standing rolled-up InGaAsP tube optical cavities, wherein self-organized InAs quantum dots or dashes are incorporated as the gain media. Such tubular optical cavities are formed when the coherently strained InAs/InGaAsP quantum dot/dash nanomembrane is selectively released from the host substrate. We have achieved lasing from rolled-up InAs/InGaAsP quantum dash microtubes at room temperature under continuous wave optical pumping. The measured threshold is ∼6 μW, and the Purcell factor and the spontaneous emission coupling factor are estimated to be ∼6.54 and ∼0.87, respectively.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optically pumped rolled-up InAs/InGaAsP quantum dash lasers at room temperature</title><author><name sortKey="Dastjerdi, M H T" uniqKey="Dastjerdi M">M. H. T. Dastjerdi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, McGill University, 3480 University Street</s1><s2>Montreal, Quebec H3A 0E9</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, Quebec H3A 0E9</wicri:noRegion></affiliation></author><author><name sortKey="Djavid, M" uniqKey="Djavid M">M. Djavid</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, McGill University, 3480 University Street</s1><s2>Montreal, Quebec H3A 0E9</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, Quebec H3A 0E9</wicri:noRegion></affiliation></author><author><name sortKey="Arafin, S" uniqKey="Arafin S">S. Arafin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, McGill University, 3480 University Street</s1><s2>Montreal, Quebec H3A 0E9</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, Quebec H3A 0E9</wicri:noRegion></affiliation></author><author><name sortKey="Liu, X" uniqKey="Liu X">X. Liu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, McGill University, 3480 University Street</s1><s2>Montreal, Quebec H3A 0E9</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, Quebec H3A 0E9</wicri:noRegion></affiliation></author><author><name sortKey="Bianucci, P" uniqKey="Bianucci P">P. Bianucci</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, McGill University, 3480 University Street</s1><s2>Montreal, Quebec H3A 0E9</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, Quebec H3A 0E9</wicri:noRegion></affiliation></author><author><name sortKey="Mi, Z" uniqKey="Mi Z">Z. Mi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, McGill University, 3480 University Street</s1><s2>Montreal, Quebec H3A 0E9</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, Quebec H3A 0E9</wicri:noRegion></affiliation></author><author><name sortKey="Poole, P J" uniqKey="Poole P">P. J. Poole</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute for Microstructural Sciences, National Research Council</s1><s2>Ottawa, Ontario K1A 0R6</s2><s3>CAN</s3><sZ>7 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Ottawa, Ontario K1A 0R6</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0004190</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 14-0004190 INIST</idno><idno type="RBID">Pascal:14-0004190</idno><idno type="wicri:Area/Main/Corpus">000364</idno><idno type="wicri:Area/Main/Repository">000782</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Continuous wave</term><term>Gallium Indium Arsenides phosphides Mixed</term><term>Indium arsenides</term><term>Microfluidics</term><term>Optical cavity</term><term>Optical pumping</term><term>Quantum dot lasers</term><term>Self organization</term><term>Spontaneous emission</term><term>Strained layer</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Pompage optique</term><term>Autoorganisation</term><term>Onde entretenue</term><term>Emission spontanée</term><term>Laser point quantique</term><term>Gallium Indium Phosphoarséniure Mixte</term><term>Cavité optique</term><term>Arséniure d'indium</term><term>Couche contrainte</term><term>InAs</term><term>InGaAsP</term><term>Microfluidique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have investigated the fabrication and optical performance of free-standing rolled-up InGaAsP tube optical cavities, wherein self-organized InAs quantum dots or dashes are incorporated as the gain media. Such tubular optical cavities are formed when the coherently strained InAs/InGaAsP quantum dot/dash nanomembrane is selectively released from the host substrate. We have achieved lasing from rolled-up InAs/InGaAsP quantum dash microtubes at room temperature under continuous wave optical pumping. The measured threshold is ∼6 μW, and the Purcell factor and the spontaneous emission coupling factor are estimated to be ∼6.54 and ∼0.87, respectively.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>28</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optically pumped rolled-up InAs/InGaAsP quantum dash lasers at room temperature</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>SPECIAL ISSUE ON III-V SEMICONDUCTOR DEVICES INTEGRATED WITH SILICON</s1></fA09><fA11 i1="01" i2="1"><s1>DASTJERDI (M. H. T.)</s1></fA11><fA11 i1="02" i2="1"><s1>DJAVID (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>ARAFIN (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>LIU (X.)</s1></fA11><fA11 i1="05" i2="1"><s1>BIANUCCI (P.)</s1></fA11><fA11 i1="06" i2="1"><s1>MI (Z.)</s1></fA11><fA11 i1="07" i2="1"><s1>POOLE (P. J.)</s1></fA11><fA12 i1="01" i2="1"><s1>HOPKINSON (Mark)</s1><s9>limin.</s9></fA12><fA12 i1="02" i2="1"><s1>MARTIN (Trevor)</s1><s9>limin.</s9></fA12><fA12 i1="03" i2="1"><s1>SMOWTON (Peter)</s1><s9>limin.</s9></fA12><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, McGill University, 3480 University Street</s1><s2>Montreal, Quebec H3A 0E9</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Institute for Microstructural Sciences, National Research Council</s1><s2>Ottawa, Ontario K1A 0R6</s2><s3>CAN</s3><sZ>7 aut.</sZ></fA14><fA15 i1="01"><s1>University of Sheffield</s1><s3>GBR</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>QinetiQ</s1><s3>GBR</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>Cardiff University</s1><s3>GBR</s3><sZ>3 aut.</sZ></fA15><fA20><s2>094007.1-094007.5</s2></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000501548560070</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>28 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0004190</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We have investigated the fabrication and optical performance of free-standing rolled-up InGaAsP tube optical cavities, wherein self-organized InAs quantum dots or dashes are incorporated as the gain media. Such tubular optical cavities are formed when the coherently strained InAs/InGaAsP quantum dot/dash nanomembrane is selectively released from the host substrate. We have achieved lasing from rolled-up InAs/InGaAsP quantum dash microtubes at room temperature under continuous wave optical pumping. The measured threshold is ∼6 μW, and the Purcell factor and the spontaneous emission coupling factor are estimated to be ∼6.54 and ∼0.87, respectively.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Pompage optique</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Optical pumping</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Autoorganisation</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Self organization</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Autoorganización</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Onde entretenue</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Continuous wave</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Onda continua</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Emission spontanée</s0><s5>06</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Spontaneous emission</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Laser point quantique</s0><s5>07</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Quantum dot lasers</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Gallium Indium Phosphoarséniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Gallium Indium Arsenides phosphides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Fosfoarseniuro Mixto</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Cavité optique</s0><s5>12</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Optical cavity</s0><s5>12</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>cavidad óptica</s0><s5>12</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Couche contrainte</s0><s5>17</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Strained layer</s0><s5>17</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Capa forzada</s0><s5>17</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>InGaAsP</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Microfluidique</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Microfluidics</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="12" i2="3" l="SPA"><s0>Microfluídico</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>006</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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